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Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

Gael Gautier*, Frederic Cayrel, Marie Capelle, Jérome Billoué, Xi Song and Jean-Francois Michaud

Nanoscale Research Letters 2012, 7:367  doi:10.1186/1556-276X-7-367

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