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Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures

Fang-Hsing Wang1, Cheng-Fu Yang2* and Yen-Hsien Lee1

Author Affiliations

1 Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan

2 Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan

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Nanoscale Research Letters 2014, 9:97  doi:10.1186/1556-276X-9-97

Published: 26 February 2014


Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cross-sectional scanning electron microscopy (SEM) observation and X-ray diffraction analyses showed that the FZO thin films were of polycrystalline nature with a preferential growth along (002) plane perpendicular to the surface of the glass substrate. Secondary ion mass spectrometry (SIMS) analyses of the FZO thin films showed that there was incorporation of F atoms in the FZO thin films, even if the substrate temperature was 300°C. Finally, the effect of substrate temperature on the transmittance ratio, optical energy gap, Hall mobility, carrier concentration, and resistivity of the FZO thin films was also investigated.

Deposition; FZO thin films; Secondary ion mass spectrometry