Figure 3.

FESEM images of Ni layers on Si(100) after annealing at different temperatures. (a) 200°C, (b) 300°C, (c) 400°C, (d) 450°C, (e) 475°C, and (f) 500°C. The deposition time, laser pulse energy, and frequency of Ni layers were 10 min, 50 mJ, and 5Hz, respectively.

Li et al. Nanoscale Research Letters 2014 9:91   doi:10.1186/1556-276X-9-91
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