Figure 3.

FESEM images and schematics of the Si nanostructures. Etching done at (a) 1,350°C, (b) 1,200°C, and (c) 1,100°C. Insets: tilted FESEM images and schematics of the Si nanostructures.

Ha et al. Nanoscale Research Letters 2014 9:9   doi:10.1186/1556-276X-9-9
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