Enhancement of antireflection property of silicon using nanostructured surface combined with a polymer deposition
1 Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong, Yuseong, Daejeon 305-701, Republic of Korea
2 Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, 373-1 Guseong, Yuseong, Daejeon 305-701, Republic of Korea
Nanoscale Research Letters 2014, 9:9 doi:10.1186/1556-276X-9-9Published: 8 January 2014
Silicon (Si) nanostructures that exhibit a significantly low reflectance in ultraviolet (UV) and visible light wavelength regions are fabricated using a hydrogen etching process. The fabricated Si nanostructures have aperiodic subwavelength structures with pyramid-like morphologies. The detailed morphologies of the nanostructures can be controlled by changing the etching condition. The nanostructured Si exhibited much more reduced reflectance than a flat Si surface: an average reflectance of the nanostructured Si was approximately 6.8% in visible light region and a slight high reflectance of approximately 17% in UV region. The reflectance was further reduced in both UV and visible light region through the deposition of a poly(dimethylsiloxane) layer with a rough surface on the Si nanostructure: the reflectance can be decreased down to 2.5%. The enhancement of the antireflection properties was analyzed with a finite difference time domain simulation method.