Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes
1 Department of Physics and Astronomy, Hicks Building, Hounsfield Road, Sheffield S3 7RH, UK
2 School of CSEE, University of Essex, Colchester CO4 3SQ, UK
3 LPCNO, INSA-UPS-CNRS, 135 av. de Rangueil, Toulouse 31077 CEDEX 4, France
4 Department of Physics, Science Faculty, Istanbul University, Vezneciler, Istanbul 34134, Turkey
Nanoscale Research Letters 2014, 9:84 doi:10.1186/1556-276X-9-84Published: 18 February 2014
The video shows the modelling results achieved using Simwindows32 for sample AsN3134. Four graphs are constantly updated as the applied voltage is swept from 1 to −5 V. The x-axis represents the distance from the top of the device, measured in μm. Precisely: top left, evolution of the band diagram, measured in eV, the green and red lines are the hole and electron Fermi levels, respectively; top right, total recombination rate, this is the recombination rate minus the generation rate in the units of cm−3 s−1; bottom left, total electron (blue) and hole (red) concentrations in the units of cm-3; bottom right, charge distribution in the units of C/cm3.
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