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Seed/catalyst-free growth of zinc oxide nanostructures on multilayer graphene by thermal evaporation

Nurul Fariha Ahmad1, Nurul Izni Rusli2, Mohamad Rusop Mahmood3, Kanji Yasui4 and Abdul Manaf Hashim15*

Author Affiliations

1 Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia

2 School of Electrical System Engineering, Universiti Malaysia Perlis, Kuala Perlis, Perlis 02000, Malaysia

3 Faculty of Electrical Engineering, Universiti Teknologi MARA, Shah Alam, Selangor 40450, Malaysia

4 Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka-machi, Nagaoka, Niigata 940-2137, Japan

5 MIMOS Berhad, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia

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Nanoscale Research Letters 2014, 9:83  doi:10.1186/1556-276X-9-83

Published: 18 February 2014


We report the seed/catalyst-free growth of ZnO on multilayer graphene by thermal evaporation of Zn in the presence of O2 gas. The effects of substrate temperatures were studied. The changes of morphologies were very significant where the grown ZnO structures show three different structures, i.e., nanoclusters, nanorods, and thin films at 600°C, 800°C, and 1,000°C, respectively. High-density vertically aligned ZnO nanorods comparable to other methods were obtained. A growth mechanism was proposed based on the obtained results. The ZnO/graphene hybrid structure provides several potential applications in electronics and optoelectronics.

Graphene; Thermal evaporation; Zinc oxide; Nanostructure; Hybrid integration