Seed/catalyst-free growth of zinc oxide nanostructures on multilayer graphene by thermal evaporation
1 Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia
2 School of Electrical System Engineering, Universiti Malaysia Perlis, Kuala Perlis, Perlis 02000, Malaysia
3 Faculty of Electrical Engineering, Universiti Teknologi MARA, Shah Alam, Selangor 40450, Malaysia
4 Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka-machi, Nagaoka, Niigata 940-2137, Japan
5 MIMOS Berhad, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia
Nanoscale Research Letters 2014, 9:83 doi:10.1186/1556-276X-9-83Published: 18 February 2014
We report the seed/catalyst-free growth of ZnO on multilayer graphene by thermal evaporation of Zn in the presence of O2 gas. The effects of substrate temperatures were studied. The changes of morphologies were very significant where the grown ZnO structures show three different structures, i.e., nanoclusters, nanorods, and thin films at 600°C, 800°C, and 1,000°C, respectively. High-density vertically aligned ZnO nanorods comparable to other methods were obtained. A growth mechanism was proposed based on the obtained results. The ZnO/graphene hybrid structure provides several potential applications in electronics and optoelectronics.