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Frequency-converted dilute nitride laser diodes for mobile display applications

Janne Konttinen1 and Ville-Markus Korpijärvi2*

Author Affiliations

1 EpiCrystals Oy, Hermiankatu 12 E 2, Tampere 33720, Finland

2 Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere 33720, Finland

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Nanoscale Research Letters 2014, 9:82  doi:10.1186/1556-276X-9-82

Published: 17 February 2014


We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above threshold powers were observed in passively triggered pulsed operation with smooth direct current modulation characteristics. The demonstration opens a new avenue for developing 620-nm semiconductor lasers required for emerging projection applications.