Frequency-converted dilute nitride laser diodes for mobile display applications
1 EpiCrystals Oy, Hermiankatu 12 E 2, Tampere 33720, Finland
2 Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere 33720, Finland
Nanoscale Research Letters 2014, 9:82 doi:10.1186/1556-276X-9-82Published: 17 February 2014
We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above threshold powers were observed in passively triggered pulsed operation with smooth direct current modulation characteristics. The demonstration opens a new avenue for developing 620-nm semiconductor lasers required for emerging projection applications.