Open Access Nano Express

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

Alexander Gubanov1*, Ville Polojärvi1, Arto Aho1, Antti Tukiainen1, Nikolai V Tkachenko2 and Mircea Guina1

Author Affiliations

1 Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, Tampere FIN-33101, Finland

2 Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, Tampere FIN-33101, Finland

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Nanoscale Research Letters 2014, 9:80  doi:10.1186/1556-276X-9-80

Published: 17 February 2014

Abstract

We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps.

PACS

78.47.D; 78.55.Cr; 88.40.hj

Keywords:
Solar cells; Dilute nitrides; GaInNAsSb; Time-resolved photoluminescence; Carrier lifetime