Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
1 Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, Tampere FIN-33101, Finland
2 Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, Tampere FIN-33101, Finland
Nanoscale Research Letters 2014, 9:80 doi:10.1186/1556-276X-9-80Published: 17 February 2014
We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps.
78.47.D; 78.55.Cr; 88.40.hj