PL properties of Si/Ge NWs as a function of photon flux. (a) PL intensity at 1,220 nm detected at 11 K as a function of the photon flux. The red line is a fit to the data. (b) Time-decay curves of the PL signal at 1,220 nm performed at 11 K and for different photon fluxes.
Irrera et al. Nanoscale Research Letters 2014 9:74 doi:10.1186/1556-276X-9-74