Figure 1.

Scheme of the fabrication of Si/Ge NWs. (a) The starting MQW consists of alternating 1-nm-thick Ge layers and 54-nm-thick Si layers, grown by MBE. This unit is repeated 62 times. (b) Deposition of an Au thin layer (2 nm) by EBE. (c) Formation of Si/Ge NWs by dipping the sample in an aqueous solution of HF and H2O2. (d) Removal of Au particles by using an aqueous solution of KI + I2. Steps (b,c,d) are performed at room temperature.

Irrera et al. Nanoscale Research Letters 2014 9:74   doi:10.1186/1556-276X-9-74
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