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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

Shigeru Yamada1*, Yasuyoshi Kurokawa1, Shinsuke Miyajima1 and Makoto Konagai12

Author Affiliations

1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan

2 Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan

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Nanoscale Research Letters 2014, 9:72  doi:10.1186/1556-276X-9-72

Published: 12 February 2014


We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.