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Field emission characteristics of zinc oxide nanowires synthesized by vapor-solid process

Shou-Yi Kuo12* and Hsin-I Lin1

Author Affiliations

1 Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

2 Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701, Taiwan

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Nanoscale Research Letters 2014, 9:70  doi:10.1186/1556-276X-9-70

Published: 11 February 2014


Vertically aligned ZnO nanowire (NW) arrays have been synthesized on silicon substrates by chemical vapor deposition. The growth of ZnO NWs may be dominated by vapor-solid nucleation mechanism. Morphological, structural, optical, and field emission characteristics can be modified by varying the growth time. For growth time that reaches 120 min, the length and diameter of ZnO NWs are 1.5 μm and 350 nm, respectively, and they also show preferential growth orientation along the c-axis. Room-temperature photoluminescence spectra exhibit a sharp UV emission and broad green emission, and the enhanced UV-to-green emission ratio with increasing growth time might originate from the reduced concentration of surface defects. Furthermore, strong alignment and uniform distribution of ZnO NWs can also effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region. The field emission measurement indicated that the growth time plays an important role in density- and morphology-controlled ZnO NWs, and thus, ZnO NWs are expected to be used in versatile optoelectronic devices.

ZnO nanowires; 1D nanostructures; Field emission; Near band edge