Schematics of double-gate GNR-FET and the atomic structure of AGNR.(a) Schematics of double-gate GNR FET where a semiconducting AGNR is used as channel material. (b) The atomic structure of AGNR. Hydrogen atoms are attached to the edge carbon atoms to terminate the dangling bonds. N is defined by counting the number of C-atoms forming a zigzag chain in the transverse direction.
Kliros Nanoscale Research Letters 2014 9:65 doi:10.1186/1556-276X-9-65