Figure 1.

Schematics of double-gate GNR-FET and the atomic structure of AGNR.(a) Schematics of double-gate GNR FET where a semiconducting AGNR is used as channel material. (b) The atomic structure of AGNR. Hydrogen atoms are attached to the edge carbon atoms to terminate the dangling bonds. N is defined by counting the number of C-atoms forming a zigzag chain in the transverse direction.

Kliros Nanoscale Research Letters 2014 9:65   doi:10.1186/1556-276X-9-65
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