Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors
Department of Aeronautical Sciences, Division of Electronics, Electric Power and Telecommunication Engineering, Hellenic Air-Force Academy, Dekeleia Attica GR-1010, Greece
Nanoscale Research Letters 2014, 9:65 doi:10.1186/1556-276X-9-65Published: 8 February 2014
The effects of uniaxial tensile strain on the ultimate performance of a dual-gated graphene nanoribbon field-effect transistor (GNR-FET) are studied using a fully analytical model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge bond relaxation and third nearest neighbor (3NN) interaction. To calculate the performance metrics of GNR-FETs, analytical expressions are used for the charge density, quantum capacitance, and drain current as functions of both gate and drain voltages. It is found that the current under a fixed bias can change several times with applied uniaxial strain and these changes are strongly related to strain-induced changes in both band gap and effective mass of the GNR. Intrinsic switching delay time, cutoff frequency, and Ion/Ioff ratio are also calculated for various uniaxial strain values. The results indicate that the variation in both cutoff frequency and Ion/Ioff ratio versus applied tensile strain inversely corresponds to that of the band gap and effective mass. Although a significant high frequency and switching performance can be achieved by uniaxial strain engineering, tradeoff issues should be carefully considered.