Table 1

Characteristics of GaInNAsSb p-i-n diodes at different illumination conditions
Spectrum Device Jsc (mA/cm2) Jsc–ideal (mA/cm2) EQEav Voc (V) FF η I0 (mA/cm2) n
AM1.5G GaInNAs (1 eV) 39.9 48.12 0.83 0.416 70% 11.6% 1.20E-03 1.55
AM1.5G (900-nm LP) GaInNAs (1 eV) 9.98 16.48 0.61 0.368 68% 2.5% 1.20E-03 1.58
AM1.5G GaInNAsSb (0.9 eV) 35.0 51.61 0.68 0.383 65% 7.2% 1.70E-02 1.60

FF, fill factor; η, solar cell efficiency.

Aho et al.

Aho et al. Nanoscale Research Letters 2014 9:61   doi:10.1186/1556-276X-9-61

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