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Performance assessment of multijunction solar cells incorporating GaInNAsSb

Arto Aho*, Antti Tukiainen, Ville Polojärvi and Mircea Guina

Author Affiliations

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere 33101, Finland

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Nanoscale Research Letters 2014, 9:61  doi:10.1186/1556-276X-9-61

Published: 5 February 2014


We have measured the characteristics of molecular beam epitaxy grown GaInNAsSb solar cells with different bandgaps using AM1.5G real sun illumination. Based on the solar cell diode characteristics and known parameters for state-of-the-art GaInP/GaAs and GaInP/GaAs/Ge cells, we have calculated the realistic potential efficiency increase for GaInP/GaAs/GaInNAsSb and GaInP/GaAs/GaInNAsSb/Ge multijunction solar cells for different current matching conditions. The analyses reveal that realistic GaInNAsSb solar cell parameters, render possible an extraction efficiency of over 36% at 1-sun AM1.5D illumination.


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III-V Semiconductor multijunction solar cells; GaInNAsSb solar cells; Molecular beam epitaxy; High efficiency solar cells; Dilute nitrides