Figure 6.

LEE versus p-GaN thickness of the nanorod LED structure. LEE is plotted as a function of the p-GaN thickness for the TE (black dots) and TM (red dots) modes. The diameter and height of simulated nanorods are 260 and 1,000 nm, respectively.

Ryu Nanoscale Research Letters 2014 9:58   doi:10.1186/1556-276X-9-58
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