Additional file 1: Figure S1.

TEM images of the synthesized Si nanowires. (a) Low magnitude TEM image of the Si nanowire. The diameter of Si nanowire is approximately 60 nm. (b) High-Resolution TEM image of the Si nanowire. The inset of Additional file 1: Figure S1b is a SAED pattern of the Si nanowire. The SAED pattern indicates the Si nanowire have a single crystalline nature and the [111] growth direction. Figure S2. MTT assay result of GH3 cells interfaced with nanowire-grown substrates in various densities (PS: plane substrate, LDSN, MDSN and HDSN: nanowire-grown substrate shown in Figure 1a, 1b and 1c). Figure S3. SEM images of primary hippocampal neurons cultured on nanowire-grown substrates in order of Figure 1a, 1b and 1c. A white circle in d indicates penetrated nanowire from bottom to top membrane of neuron. Figure S4. (a) A schematic drawing for observation of cell/nanowire interface. Dotted line represents a sectioning direction of FIB. Square part is the area we observed by SEM (b) SEM images of primary hippocampal neurons-nanowire interface (N: nanowire, P: platinum layer for the protection of upper part of cell, C: cell soma). Arrow indicates cell membrane, which is covered by gold layer for a first SEM observation. Figure S5. Cyclic voltammogram of individual nanoelectrode in 0.1 M K3Fe(CN)6. Ag/AgCl electrode was served as the reference electrode and a platinum wire was served as the auxiliary electrode. The scan rate was 10 mV/s. Figure S6. Equivalent circuit of our measurement system (Cm: cell membrane capacitance, Em: cell membrane potential, Rm: cell membrane resistance, Rleak: junction leakage resistance, Re: electrode resistance, Ce: electrode capacitance).

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Lee et al. Nanoscale Research Letters 2014 9:56   doi:10.1186/1556-276X-9-56