SEM images of the fabricated device's center, GH3 cell, and cross-sectional nanowire probe-cell interface. (a) An SEM image of the center part of the fabricated device (inset: magnification of vertical nanowire probe). (b) An SEM image of a GH3 cell cultured on the device (white circle: the position of vertical nanowire probe). (c) An SEM image of a cross-sectional nanowire probe-cell interface (N: nanowires, C: GH3 cell, 1P: bottom passivation layer, 2P: top passivation layer, white arrows: Pt layer).
Lee et al. Nanoscale Research Letters 2014 9:56 doi:10.1186/1556-276X-9-56