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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Yi-Jiun Chen1, Hsin-Lu Chen1, Tai-Fa Young1*, Ting-Chang Chang2*, Tsung-Ming Tsai3, Kuan-Chang Chang3, Rui Zhang4, Kai-Huang Chen5, Jen-Chung Lou4, Tian-Jian Chu3, Jung-Hui Chen6, Ding-Hua Bao7 and Simon M Sze28

Author Affiliations

1 Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

2 Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3 Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4 School of Software and Microelectronics, Peking University, BeiJing 100871, People’s Republic of China

5 Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung 829, Taiwan

6 Department of Chemistry, National Kaohsiung Normal University, Kaohsiung 802, Taiwan

7 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China

8 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

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Nanoscale Research Letters 2014, 9:52  doi:10.1186/1556-276X-9-52

Published: 29 January 2014


We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process.

Carbon; Hydrogen redox; Conjugation double bond; RRAM