Table 3

Electrical and optical parameters in GaAs
Parameter Symbol Values
Lattice constant [19] a0 5.65+3.88 ×10-5 (Te-300) (Å)
Electron effective mass [13] 300 K/10 K
Conduction <a onClick="popup('http://www.nanoscalereslett.com/content/9/1/51/mathml/M38','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/9/1/51/mathml/M38">View MathML</a> 0.063/ 0.067(m0)
Light hole ml 0.076/ 0.082(m0)
Heavy hole mh 0.50/ 0.51(m0)
Split-off mso 0.145/ 0.154(m0)
Energy gap (T=0) Eg0 1.519 eV
Varshni parameters [19]
<a onClick="popup('http://www.nanoscalereslett.com/content/9/1/51/mathml/M39','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/9/1/51/mathml/M39">View MathML</a> αT 5.408×10-4 (eV/K)
βT 204
SO splitting energy [19] Δso 0.34 eV
Refractive index [13] nr 3.255(1+4.5×10-5Te)
Static dielectric constant [26] κ 12.4(1+1.2×10-4Te)

Seifikar et al.

Seifikar et al. Nanoscale Research Letters 2014 9:51   doi:10.1186/1556-276X-9-51

Open Data