Figure 9.

The DOS of GaN 0.012Sb0.988, calculated using the SCGF method and including the LCINS distribution given in the inset. Inset displays the distribution of N states assumed for GaN 0.012Sb0.988 (blue line), in comparison with the LCINS distribution of GaN 0.012As0.988, shifted down in energy by 888 meV (dashed red line). The zero of energy is taken to be at the top of the GaSb valence band.

Seifikar et al. Nanoscale Research Letters 2014 9:51   doi:10.1186/1556-276X-9-51
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