Figure 5.

The density of state for InyGa1-yNxAs1-x, withy=4% andx=1%. Density of states calculated using the SCGF approach and LCINS distribution of N states at room temperature. Inset shows calculated distribution of N cluster state energies at low temperature, weighted by their interactions with the conduction band edge state for GaN xAs1-x with x=0.84% and x=1.2%.

Seifikar et al. Nanoscale Research Letters 2014 9:51   doi:10.1186/1556-276X-9-51
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