The InN epitaxy via controlling In bilayer
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Nanoscale Research Letters 2014, 9:5 doi:10.1186/1556-276X-9-5Published: 6 January 2014
The method of In bilayer pre-deposition and penetrated nitridation had been proposed, which had been proven to have many advantages theoretically. To study the growth behavior of this method experimentally, various pulse times of trimethylindium supply were used to get the optimal indium bilayer controlling by metalorganic vapour phase epitaxy. The results revealed that the InN film quality became better as the thickness of the top indium atomic layers was close to bilayer. A following tuning of nitridation process enhanced the quality of InN film further, which means that a moderate, stable, and slow nitridation process by NH3 flow also plays the key role in growing better-quality InN film. Meanwhile, the biaxial strain of InN film was gradually relaxing when the flatness was increasingly improved.