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Raman enhancement by graphene-Ga2O3 2D bilayer film

Yun Zhu12, Qing-Kai Yu34, Gu-Qiao Ding1*, Xu-Guang Xu1, Tian-Ru Wu1, Qian Gong1, Ning-Yi Yuan2, Jian-Ning Ding2, Shu-Min Wang1, Xiao-Ming Xie1 and Mian-Heng Jiang1

Author Affiliations

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China

2 Center for Low-Dimensional Materials, Micro-Nano Devices and System, Changzhou University, Changzhou 213164, China

3 Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA

4 Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USA

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Nanoscale Research Letters 2014, 9:48  doi:10.1186/1556-276X-9-48

Published: 28 January 2014


2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.


61.46.-w (structure of nanoscale materials), 68.65.Pq (graphene films), 74.25.nd (Raman and optical spectroscopy)

Graphene; Raman enhancement; Gallium oxide; Chemical vapor deposition