Figure 4.

Typical bipolar (I-V) curves of resistive switching behavior in Zr/CeOx/Pt devices with different CeOxlayer thicknesses. (a) 25 nm and (b) 14 nm.

Ismail et al. Nanoscale Research Letters 2014 9:45   doi:10.1186/1556-276X-9-45
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