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ZnO-porous silicon nanocomposite for possible memristive device fabrication

Lizeth Martínez, Oscar Ocampo, Yogesh Kumar and Vivechana Agarwal*

Author Affiliations

Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico

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Nanoscale Research Letters 2014, 9:437  doi:10.1186/1556-276X-9-437

Published: 27 August 2014


Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

Memristor; Zinc oxide; Porous silicon; Composite; Nanocrystallites