High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
1 Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan
2 Institute of Electronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan
3 Institute of Optoelectronic Sciences, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, Taiwan
4 Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
Nanoscale Research Letters 2014, 9:433 doi:10.1186/1556-276X-9-433Published: 27 August 2014
In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.