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High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya-Ju Lee1*, Yung-Chi Yao1, Chun-Ying Huang2, Tai-Yuan Lin3, Li-Lien Cheng1, Ching-Yun Liu1, Mei-Tan Wang4 and Jung-Min Hwang4

Author Affiliations

1 Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan

2 Institute of Electronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan

3 Institute of Optoelectronic Sciences, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, Taiwan

4 Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

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Nanoscale Research Letters 2014, 9:433  doi:10.1186/1556-276X-9-433

Published: 27 August 2014


In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

AlGaN/GaN HEMT; 2-DEG; Breakdown voltage