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Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Panagiotis Sarafis and Androula Galiouna Nassiopoulou*

Author Affiliations

NCSR Demokritos, INN, Terma Patriarchou Grigoriou, Aghia Paraskevi, 15310 Athens, Greece

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Nanoscale Research Letters 2014, 9:418  doi:10.1186/1556-276X-9-418

Published: 21 August 2014


In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW TLines), formed on the porous Si layer, was used in this respect. It was shown that the dielectric parameters of porous Si (dielectric permittivity and loss tangent) in the above frequency range have values similar to those obtained at lower frequencies (1 to 40 GHz). More specifically, for the samples used, the obtained values were approximately 3.12 ± 0.05 and 0.023 ± 0.005, respectively. Finally, a comparison was made between the performance of the CPW TLines on a 150-μm-thick porous Si layer and on three other radiofrequency (RF) substrates, namely, on trap-rich high-resistivity Si (trap-rich HR Si), on a standard complementary metal-oxide-semiconductor (CMOS) Si wafer (p-type, resistivity 1 to 10 Ω.cm) and on quartz.


84.40.-x; 77.22.Ch; 81.05.Rm

Porous Si; Nanoscale semiconductors; RF characterization; Dielectric permittivity; Millimeter-wave passive devices