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Open Access Nano Express

Enhanced electrical properties in sub-10-nm WO3 nanoflakes prepared via a two-step sol-gel-exfoliation method

Serge Zhuiykov* and Eugene Kats

Author Affiliations

Materials Science and Engineering Division, CSIRO, 37 Graham Road, Highett, VIC 3190, Australia

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Nanoscale Research Letters 2014, 9:401  doi:10.1186/1556-276X-9-401

Published: 18 August 2014

Abstract

The morphology and electrical properties of orthorhombic β-WO3 nanoflakes with thickness of ~7 to 9 nm were investigated at the nanoscale with a combination of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNA™), Fourier transform infra-red absorption spectroscopy (FTIR), linear sweep voltammetry (LSV) and Raman spectroscopy techniques. CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nanoflakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β-WO3 nanoflakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro and nanostructured WO3 synthesized at alternative temperatures.

Keywords:
WO3; Layered semiconductors; Nanoflake; Sol-gel; Exfoliation