Figure 3.

Schematic diagram of the Mg incorporation behavior in the AlGaN grown by the MSE technique. As the interruption interval is long, only some peaks distribute locally at the interruptions after Mg segregation and diffusion (a), optimizing the interruption interval, a high and uniform Mg distribution over the entire AlGaN epilayer could be achieved (b).

Zheng et al. Nanoscale Research Letters 2014 9:40   doi:10.1186/1556-276X-9-40
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