Figure 2.

Formation enthalpy difference of MgGa/MgAl and CMg profile of Al0.49Ga0.51N film. (a) Formation enthalpy difference of MgGa and MgAl between Ga-rich and N-rich condition. (b)CMg profile of Al0.49Ga0.51N film with three different Cp2Mg flows grown by the MSE technique. The inset in (b) illustrates the source supply sequence of the MSE technique, an ultimate V/III ratio condition is shortly produced during the interruption.

Zheng et al. Nanoscale Research Letters 2014 9:40   doi:10.1186/1556-276X-9-40
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