Figure 1.

Formation enthalpies of MgGa/MgAl and normalized CMg cprofile of AlGaN films. (a) In the bulk and (b) on the surface of AlxGa1 -xN as a function of Al content under N-rich condition. (c) Normalized CMg of AlxGa1 -xN (x = 0.33, 0.54) epilayers from the surface to bulk. The inset in (a) shows the calculated AlxGa1 -xN lattice constants a and c as a function of Al content. The inset in (c) illustrates the source supply sequence of the conventional method.

Zheng et al. Nanoscale Research Letters 2014 9:40   doi:10.1186/1556-276X-9-40
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