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High Mg effective incorporation in Al-rich Al x Ga1 - x N by periodic repetition of ultimate V/III ratio conditions

Tongchang Zheng, Wei Lin*, Duanjun Cai, Weihuang Yang, Wei Jiang, Hangyang Chen, Jinchai Li, Shuping Li and Junyong Kang*

Author Affiliations

Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People’s Republic of China

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Nanoscale Research Letters 2014, 9:40  doi:10.1186/1556-276X-9-40

Published: 21 January 2014

Abstract

According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in AlxGa1 – xN bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on AlxGa1 – xN surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al0.99Ga0.01N epilayer.

Keywords:
First-principles calculations; MOVPE; AlGaN epilayer; High Mg incorporation; Ultimate V/III ratio