Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
1 Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan
2 Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan
Nanoscale Research Letters 2014, 9:392 doi:10.1186/1556-276X-9-392Published: 13 August 2014
The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of Ioff than that in JL planar TFTs. The measured of −1.34 mV/°C in JL GAA nanosheet TFTs has smaller temperature dependence than that of −5.01 mV/°C in JL planar TFTs.