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Unipolar resistive switching of ZnO-single-wire memristors

Yong Huang12, Ying Luo1, Zihan Shen1, Guoliang Yuan1 and Haibo Zeng1*

Author Affiliations

1 Institute of Optoelectronics & Nanomaterials (ION), School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

2 Department of Fundamental Courses, Jinling Institute of Technology, Nanjing 211169, China

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Nanoscale Research Letters 2014, 9:381  doi:10.1186/1556-276X-9-381

Published: 7 August 2014


Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 103. The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively.

ZnO; Resistive random access memory (RRAM); Resistive switching (RS); Electrical properties