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Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene

Yangxi Song1, Changrui Zhang1*, Bin Li1, Guqiao Ding2, Da Jiang2, Haomin Wang2 and Xiaoming Xie2*

Author Affiliations

1 State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People's Republic of China

2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China

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Nanoscale Research Letters 2014, 9:367  doi:10.1186/1556-276X-9-367

Published: 28 July 2014


Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si.

Hexagonal boron nitride; Nanosheets; Graphene; van der Waals epitaxy; Chemical vapor deposition