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Open Access Nano Commentary

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

Sangheon Lee*, Jiyong Woo, Daeseok Lee, Euijun Cha and Hyunsang Hwang

Author Affiliations

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea

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Nanoscale Research Letters 2014, 9:364  doi:10.1186/1556-276X-9-364

Published: 25 July 2014

Abstract

In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

Keywords:
ReRAM; Reliability; Selectivity