Figure 4.

PL spectra at 15 K of ternary CL samples as a function of the growth rate. (a) Spectra of samples containing a GaAsN CL grown at 1 and 2 ML s−1 (D1 and D2, respectively), together with that of a sample with the CL grown at 1 ML s−1 using a lower RF plasma source power (D3). (b) Spectra of samples containing a GaAsSb CL grown at 1 and 2 ML s−1 (E1 and E2, respectively), together with that of a sample with the CL grown at 1 ML s−1 using a lower Sb effusion cell temperature (E3).

Utrilla et al. Nanoscale Research Letters 2014 9:36   doi:10.1186/1556-276X-9-36
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