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Conductive and transparent multilayer films for low-temperature TiO2/Ag/SiO2 electrodes by E-beam evaporation with IAD

Po-Kai Chiu12, Chao-Te Lee1*, Donyau Chiang1, Wen-Hao Cho1, Chien-Nan Hsiao1, Yi-Yan Chen2, Bo-Ming Huang2 and Jer-Ren Yang2

Author Affiliations

1 Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu Science Park, Hsinchu 300, Taiwan

2 Institute of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan

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Nanoscale Research Letters 2014, 9:35  doi:10.1186/1556-276X-9-35

Published: 16 January 2014


Conductive and transparent multilayer thin films consisting of three alternating layers (TiO2/Ag/SiO2, TAS) have been fabricated for applications as transparent conducting oxides. Metal oxide and metal layers were prepared by electron-beam evaporation with ion-assisted deposition, and the optical and electrical properties of the resulting films as well as their energy bounding characteristics and microstructures were carefully investigated. The optical properties of the obtained TAS material were compared with those of well-known transparent metal oxide glasses such as ZnO/Ag/ZnO, TiO2/Ag/TiO2, ZnO/Cu/ZnO, and ZnO/Al/ZnO. The weathering resistance of the TAS film was improved by using a protective SiO2 film as the uppermost layer. The transmittance spectra and sheet resistance of the material were carefully measured and analyzed as a function of the layer thickness. By properly adjusting the thickness of the metal and dielectric films, a low sheet resistance of 6.5 ohm/sq and a high average transmittance of over 89% in the 400 to 700 nm wavelength regions were achieved. We found that the Ag layer played a significant role in determining the optical and electrical properties of this film.

TiO2/Ag/SiO2; E-beam; Ion-beam-assisted deposition; Room temperature; Transparent conducting oxides