Open Access Nano Express

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

Jin Zhang, Senlin Li, Hui Xiong, Wu Tian, Yang Li, Yanyan Fang, Zhihao Wu, Jiangnan Dai, Jintong Xu, Xiangyang Li and Changqing Chen

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Nanoscale Research Letters 2014, 9:341  doi:10.1186/1556-276X-9-341

Published: 9 July 2014

Abstract (provisional)

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 x 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

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