Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
Nanoscale Research Letters 2014, 9:341 doi:10.1186/1556-276X-9-341Published: 9 July 2014
With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 x 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.