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Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

Yu-Jen Hsiao1*, Chung-Hsin Lu2, Liang-Wen Ji3*, Teen-Hang Meen4, Yan-Lung Chen3 and Hsiao-Ping Chi5

Author Affiliations

1 National Nano Device Laboratories, No. 27, Nanke 3rd Rd., Xinshi District, Tainan 74147, Taiwan

2 Department of Chemical Engineering, National Taiwan University, Roosevelt Rd., Da-an District, Taipei 617, Taiwan

3 Institute of Electro-Optical and Materials Science, National Formosa University, Wénhuà Rd., Huwei, Yunlin 632, Taiwan

4 Department of Electronic Engineering, National Formosa University, Roosevelt Rd., Da-an District, Yunlin 632, Taiwan

5 Department of Electrical Engineering, Nan Jeon Institute of Technology, No. 178, Chao-Zing Rd., Yanshui District, Tainan 737, Taiwan

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Nanoscale Research Letters 2014, 9:32  doi:10.1186/1556-276X-9-32

Published: 15 January 2014


We demonstrate that heterojunction photovoltaics based on hydrothermal-grown In2S3 on p-Si were fabricated and characterized in the paper. An n-type In2S3 nanoflake-based film with unique 'cross-linked network’ structure was grown on the prepared p-type silicon substrate. It was found that the bandgap energy of such In2S3 film is 2.5 eV by optical absorption spectra. This unique nanostructure significantly enhances the surface area of the In2S3 films, leading to obtain lower reflectance spectra as the thickness of In2S3 film was increased. Additionally, such a nanostructure resulted in a closer spacing between the cross-linked In2S3 nanostructures and formed more direct conduction paths for electron transportation. Thus, the short-circuit current density (Jsc) was effectively improved by using a suitable thickness of In2S3. The power conversion efficiency (PCE, η) of the AZO/In2S3/textured p-Si heterojunction solar cell with 100-nm-thick In2S3 film was 2.39%.

Heterojunction; Nanoflake; In2S3