Sheet resistance of a 40-nm-thick Al film on Si substrate as a function of annealing time. Annealing temperature was fixed at 550°C. The sheet resistance rapidly increases after 3 h annealing and then almost saturates. For comparison, sheet resistances of a 90-nm-thick Al film before and after 9 h annealing are also plotted.
Noh Nanoscale Research Letters 2014 9:312 doi:10.1186/1556-276X-9-312