AFM images of Ga droplets. (a) 4 × 4 μm2 AFM image of Ga droplets formed on the GaAs(001) surface at substrate temperature TS = 500°C after a growth interruption of 30 min; the profile plotted below corresponds to the line crossing a Ga droplet in the AFM image. The dotted line represents the depression measured underneath the Ga droplet after HCl etching. (b) 4 × 4 μm2 AFM image of the sample of Figure 1a after removal of Ga droplets by HCl etching. The profiles along the two directions marked on the image are shown below.
Fuster et al. Nanoscale Research Letters 2014 9:309 doi:10.1186/1556-276X-9-309