Figure 4.

Analysis of the RS characteristics of Ru/Lu2O3/ITO ReRAM device. (a) The electroforming process of the Ru/Lu2O3/ITO ReRAM device with current compliance of 100 μA. Shaded area shows the typical RS behavior after electroforming process. (b) Enlarged view of the shaded region showing promising RS characteristics of the Ru/Lu2O3/ITO ReRAM device.

Mondal et al. Nanoscale Research Letters 2014 9:3   doi:10.1186/1556-276X-9-3
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