Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications
1 Department of Applied Chemistry, National Chi Nan University, Nantou 545, Taiwan
2 Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan
3 Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan
4 Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan
Nanoscale Research Letters 2014, 9:3 doi:10.1186/1556-276X-9-3Published: 3 January 2014
In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu2O3/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu2O3 thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu2O3 thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.