Open Access Nano Express

Stochastic switching of TiO2-based memristive devices with identical initial memory states

Qingjiang Li12, Ali Khiat2, Iulia Salaoru2, Hui Xu1 and Themistoklis Prodromakis2*

Author Affiliations

1 College of Electronics Science and Engineering, National University of Defense Technology, Changsha 410073, China

2 Southampton Nanofabrication Centre, Nano Group, Department of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK

For all author emails, please log on.

Nanoscale Research Letters 2014, 9:293  doi:10.1186/1556-276X-9-293

Published: 10 June 2014

Abstract

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.

Keywords:
Resistive switching; Initial state; Filamentary distribution