Table 1

Comparison of main device characteristics for RRAM devices with rectifying property
RRAM structure Diode RHRS/RLRS ratio Set voltage (V) Reset voltage (V) F/R ratio (V)
Pt/TiOx/Pt [8] Pt/TiOx/Pt ~102 @ 1 V ~4.5 V ~2 <102 @ ±0.5
Pt/NiO/Pt [10] Pt/p-NiOx/n-TiOx/Pt ~103 ~ −3 105 @ ±3
Pt/WO3/a-Si/Cu [15] Self-rectified ~102 @ 1 V ~1 V ~ −1.5 102 @ ±1
Pt/A1/PCMO/Pt [16] Self-rectified 10 @ 1 V 10 @ 4
NiSi/HfOx/TiN [24] Self-rectified >103 ~1.8 >103 @ ±1
This work TaN/ZrTiOx/Ni Ni/n+-Si ~2,300 @ 0.1 V ~0.75 V ~ −1 ~103 @ ±0.2

Lin et al.

Lin et al. Nanoscale Research Letters 2014 9:275   doi:10.1186/1556-276X-9-275

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